0341441 20240103193339.520100318235959.9 000264694700032 10.1016/j.mejo.2008.06.054 3 s. cav_un_epca*02572530026-2692403 (2009)496-498Elsevier quantum dots ballistic transport semiconductor heterojunction cav_un_auth*0101757 Vaniš Jan 004 Diagnostics of Materials for Electronics and Optoelectronics URE-Y Synthesis and characterization of nanomaterials Ústav fotoniky a elektroniky AV ČR, v. v. i. cav_un_auth*0101769 Zelinka Jiří 004 Diagnostics of Materials for Electronics and Optoelectronics URE-Y Ústav fotoniky a elektroniky AV ČR, v. v. i. cav_un_auth*0101704 Malina Václav 004 Diagnostics of Materials for Electronics and Optoelectronics URE-Y Ústav fotoniky a elektroniky AV ČR, v. v. i. cav_un_auth*0200291 Henini M. GB cav_un_auth*0100432 Pangrác Jiří Polovodiče Semiconductors FZU-D Semiconductors Fyzikální ústav AV ČR, v. v. i. cav_un_auth*0100384 Melichar Karel Polovodiče Semiconductors FZU-D Fyzikální ústav AV ČR, v. v. i. cav_un_auth*0100250 Hulicius Eduard Polovodiče Semiconductors FZU-D Semiconductors Fyzikální ústav AV ČR, v. v. i. cav_un_auth*0101209 Šroubek Filip Zpracování obrazové informace Department of Image Processing ZOI ZOI UTIA-B Department of Image Processing Ústav teorie informace a automatizace AV ČR, v. v. i. cav_un_auth*0101765 Walachová Jarmila 004 Diagnostics of Materials for Electronics and Optoelectronics URE-Y Ústav fotoniky a elektroniky AV ČR, v. v. i. GA202/05/0242 GA ČR cav_un_auth*0001744 CEZ:AV0Z20670512 CEZ:AV0Z10100521 CEZ:AV0Z10750506 Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed. 2010 BM http://hdl.handle.net/11104/0184437 0.812 0.267 4.3 0.00699 0.285 1628 337 2009 000264694700032 WOS cav_un_epca*0257253 Microelectronics Journal 0026-2692 1879-2391 Roč. 40 č. 3 2009 496 498 Elsevier