| bibtype |
J -
Journal Article
|
| ARLID |
0084538 |
| utime |
20240103184323.3 |
| mtime |
20070730235959.9 |
| title
(primary) (eng) |
Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy |
| specification |
|
| serial |
| ARLID |
cav_un_epca*0256166 |
| ISSN |
0003-6951 |
| title
|
Applied Physics Letters |
| volume_id |
91 |
| volume |
4 (2007) |
| publisher |
|
|
| title
(cze) |
Studium InAs kvantových teček v AlGaAs/GaAs heterostruktuře pomocí balistické elektronové emisní mikroskopie |
| keyword |
quantum dots |
| keyword |
ballistic transport |
| keyword |
semiconductor heterojunctions |
| author
(primary) |
| ARLID |
cav_un_auth*0101765 |
| name1 |
Walachová |
| name2 |
Jarmila |
| institution |
URE-Y |
| share |
30 |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101769 |
| name1 |
Zelinka |
| name2 |
Jiří |
| institution |
URE-Y |
| share |
5 |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101704 |
| name1 |
Malina |
| name2 |
Václav |
| institution |
URE-Y |
| share |
5 |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101757 |
| name1 |
Vaniš |
| name2 |
Jan |
| institution |
URE-Y |
| full_dept |
Synthesis and characterization of nanomaterials |
| share |
25 |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101209 |
| name1 |
Šroubek |
| name2 |
Filip |
| institution |
UTIA-B |
| full_dept |
Department of Image Processing |
| fullinstit |
Ústav teorie informace a automatizace AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0100432 |
| name1 |
Pangrác |
| name2 |
Jiří |
| institution |
FZU-D |
| full_dept |
Semiconductors |
| fullinstit |
Fyzikální ústav AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0100384 |
| name1 |
Melichar |
| name2 |
Karel |
| institution |
FZU-D |
| fullinstit |
Fyzikální ústav AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0100250 |
| name1 |
Hulicius |
| name2 |
Eduard |
| institution |
FZU-D |
| full_dept |
Semiconductors |
| fullinstit |
Fyzikální ústav AV ČR, v. v. i. |
|
| cas_special |
| project |
| project_id |
GA202/05/0242 |
| agency |
GA ČR |
| ARLID |
cav_un_auth*0001744 |
|
| research |
CEZ:AV0Z20670512 |
| research |
CEZ:AV0Z10750506 |
| research |
CEZ:AV0Z10100521 |
| abstract
(eng) |
Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0,55 V to 2 V. In the voltage range from 0.55 V to 0.8 V examples of ballistic characteristics and their derivatives are given. |
| abstract
(cze) |
Pomocí balistické elektronové emisní mikroskopie/spektroskopie byly studovány samouspořádané InAs kvantové tečky v GaAs/GaAlAs heterostruktuře. Měřené struktury byly narosteny metalorganickou epitaxií. Byly studovány tečky s eliptickým obrazem. Jsou uvedeny příklady spektroskopických chrakteristik na a mimo kvantovou tečku v napěťovém rozsahu 0,55V až 2V. Dále jsou uvedeny příklady spektroskopických charakteristik s jejich derivacemi v napěťovém rozsahu 0,55V až 0,8V. |
| reportyear |
2008 |
| RIV |
BM |
| permalink |
http://hdl.handle.net/11104/0147275 |
| mrcbT16-f |
4.068 |
| mrcbT16-g |
0.627 |
| mrcbT16-h |
5.4 |
| mrcbT16-i |
0.71774 |
| mrcbT16-j |
1.491 |
| mrcbT16-k |
157868 |
| mrcbT16-l |
5818 |
| arlyear |
2007 |
| mrcbU63 |
cav_un_epca*0256166 Applied Physics Letters 0003-6951 1077-3118 Roč. 91 č. 4 2007 042110.1 042110.3 AIP Publishing |
|