bibtype C - Conference Paper (international conference)
ARLID 0095013
utime 20240111140657.0
mtime 20080109235959.9
title (primary) (eng) Study of InAs quantum dots in GaAs/AlGaAs heterostructure by ballistic electron emission microscopy/spectroscopy
specification
page_count 3 s.
media_type CD ROM
serial
ARLID cav_un_epca*0095062
ISBN N
title Technical Digest. QDOS 2007 - Quantum Dot Optoelectronics Symposium
publisher
place [Nicosia]
name [University of Cyprus]
year 2007
editor
name1 Ellinas
name2 Georgios
editor
name1 Iezekiel
name2 Stavros
title (cze) Studium InAs kvantových teček v GaAs/AlGaAs heterostruktuře pomocí balistické elektronové emisní mikroskopie/spektroskopie
keyword quantum dots
keyword ballistic transport
keyword semiconductor heterojunctions
author (primary)
ARLID cav_un_auth*0101757
name1 Vaniš
name2 Jan
institution URE-Y
full_dept Synthesis and characterization of nanomaterials
share 30
fullinstit Ústav fotoniky a elektroniky AV ČR, v. v. i.
author
ARLID cav_un_auth*0101769
name1 Zelinka
name2 Jiří
institution URE-Y
share 5
fullinstit Ústav fotoniky a elektroniky AV ČR, v. v. i.
author
ARLID cav_un_auth*0101704
name1 Malina
name2 Václav
institution URE-Y
share 5
fullinstit Ústav fotoniky a elektroniky AV ČR, v. v. i.
author
ARLID cav_un_auth*0200291
name1 Henini
name2 M.
country GB
author
ARLID cav_un_auth*0101209
name1 Šroubek
name2 Filip
institution UTIA-B
full_dept Department of Image Processing
fullinstit Ústav teorie informace a automatizace AV ČR, v. v. i.
author
ARLID cav_un_auth*0101765
name1 Walachová
name2 Jarmila
institution URE-Y
share 25
fullinstit Ústav fotoniky a elektroniky AV ČR, v. v. i.
source
source_type textový soubor
source_size 181 KB
cas_special
project
project_id GA202/05/0242
agency GA ČR
ARLID cav_un_auth*0001744
research CEZ:AV0Z20670512
research CEZ:AV0Z10750506
abstract (eng) Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission icroscopy/spectroscopy. The studied structures were grown by metal beam epitaxy. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are studied. Examples of ballistic characteristics and their derivatives in the quantum dot resonant level region are given.
abstract (cze) Pomocí balistické elektronové emisní mikroskopie/spektroskopie byly studovány samouspořádané InAs kvantové tečky v GaAs/GaAlAs heterostruktuře. Měřené struktury byly narosteny metodou molekulární svazkovou epitaxií. Byly studovány tečky s eliptickým obrazem. Jsou uvedeny příklady spektroskopických chrakteristik na a mimo kvantovou tečku. Dále jsou uvedeny příklady spektroskopických charakteristik s jejich derivacemi v oblasti hladin v kvantové tečce.
action
ARLID cav_un_auth*0235827
name QDOS 2007 - Quantum Dot Optoelectronics Symposium
place Limassol
dates 14.11.2007-16.11.2007
country CY
reportyear 2008
RIV BM
permalink http://hdl.handle.net/11104/0154695
arlyear 2007
mrcbU56 textový soubor 181 KB
mrcbU63 cav_un_epca*0095062 Technical Digest. QDOS 2007 - Quantum Dot Optoelectronics Symposium N --- [Nicosia] [University of Cyprus] 2007
mrcbU67 Ellinas Georgios 340
mrcbU67 Iezekiel Stavros 340