| bibtype |
J -
Journal Article
|
| ARLID |
0341441 |
| utime |
20240103193339.5 |
| mtime |
20100318235959.9 |
| WOS |
000264694700032 |
| DOI |
10.1016/j.mejo.2008.06.054 |
| title
(primary) (eng) |
Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE |
| specification |
|
| serial |
| ARLID |
cav_un_epca*0257253 |
| ISSN |
0026-2692 |
| title
|
Microelectronics Journal |
| volume_id |
40 |
| volume |
3 (2009) |
| page_num |
496-498 |
| publisher |
|
|
| keyword |
quantum dots |
| keyword |
ballistic transport |
| keyword |
semiconductor heterojunction |
| author
(primary) |
| ARLID |
cav_un_auth*0101757 |
| name1 |
Vaniš |
| name2 |
Jan |
| full_dept (cz) |
004 |
| full_dept (eng) |
Diagnostics of Materials for Electronics and Optoelectronics |
| institution |
URE-Y |
| full_dept |
Synthesis and characterization of nanomaterials |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101769 |
| name1 |
Zelinka |
| name2 |
Jiří |
| full_dept (cz) |
004 |
| full_dept |
Diagnostics of Materials for Electronics and Optoelectronics |
| institution |
URE-Y |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101704 |
| name1 |
Malina |
| name2 |
Václav |
| full_dept (cz) |
004 |
| full_dept |
Diagnostics of Materials for Electronics and Optoelectronics |
| institution |
URE-Y |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0200291 |
| name1 |
Henini |
| name2 |
M. |
| country |
GB |
|
| author
|
| ARLID |
cav_un_auth*0100432 |
| name1 |
Pangrác |
| name2 |
Jiří |
| full_dept (cz) |
Polovodiče |
| full_dept |
Semiconductors |
| institution |
FZU-D |
| full_dept |
Semiconductors |
| fullinstit |
Fyzikální ústav AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0100384 |
| name1 |
Melichar |
| name2 |
Karel |
| full_dept (cz) |
Polovodiče |
| full_dept |
Semiconductors |
| institution |
FZU-D |
| fullinstit |
Fyzikální ústav AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0100250 |
| name1 |
Hulicius |
| name2 |
Eduard |
| full_dept (cz) |
Polovodiče |
| full_dept |
Semiconductors |
| institution |
FZU-D |
| full_dept |
Semiconductors |
| fullinstit |
Fyzikální ústav AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101209 |
| name1 |
Šroubek |
| name2 |
Filip |
| full_dept (cz) |
Zpracování obrazové informace |
| full_dept |
Department of Image Processing |
| department (cz) |
ZOI |
| department |
ZOI |
| institution |
UTIA-B |
| full_dept |
Department of Image Processing |
| fullinstit |
Ústav teorie informace a automatizace AV ČR, v. v. i. |
|
| author
|
| ARLID |
cav_un_auth*0101765 |
| name1 |
Walachová |
| name2 |
Jarmila |
| full_dept (cz) |
004 |
| full_dept |
Diagnostics of Materials for Electronics and Optoelectronics |
| institution |
URE-Y |
| fullinstit |
Ústav fotoniky a elektroniky AV ČR, v. v. i. |
|
| cas_special |
| project |
| project_id |
GA202/05/0242 |
| agency |
GA ČR |
| ARLID |
cav_un_auth*0001744 |
|
| research |
CEZ:AV0Z20670512 |
| research |
CEZ:AV0Z10100521 |
| research |
CEZ:AV0Z10750506 |
| abstract
(eng) |
Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed. |
| reportyear |
2010 |
| RIV |
BM |
| permalink |
http://hdl.handle.net/11104/0184437 |
| mrcbT16-f |
0.812 |
| mrcbT16-g |
0.267 |
| mrcbT16-h |
4.3 |
| mrcbT16-i |
0.00699 |
| mrcbT16-j |
0.285 |
| mrcbT16-k |
1628 |
| mrcbT16-l |
337 |
| arlyear |
2009 |
| mrcbU34 |
000264694700032 WOS |
| mrcbU63 |
cav_un_epca*0257253 Microelectronics Journal 0026-2692 1879-2391 Roč. 40 č. 3 2009 496 498 Elsevier |
|